2D transition metal dichalcogenides (TMDs) have attracted a lot of attentionrecently for energy-efficient tunneling-field-effect transistor (TFET)applications due to their excellent gate control resulting from theiratomically thin dimensions. However, most TMDs have bandgaps (Eg) and effectivemasses (m*) outside the optimum range needed for high performance. It is shownhere that the newly discovered 2D material, few-layer phosphorene, has severalproperties ideally suited for TFET applications: 1) direct Eg in the optimumrange ~1.0-0.4 eV, 2) light transport m* (0.15m0), 3) anisotropic m* whichincreases the density of states near the band edges, and 4) a high mobility.These properties combine to provide phosphorene TFET outstanding ION 1 mA/um,ON/OFF ratio~1e6, scalability to 6 nm channel length and 0.2 V supply voltage,thereby significantly outperforming the best TMD-TFETs in energy-delayproducts. Full-band atomistic quantum transport simulations establishphosphorene TFETs as serious candidates for energy-eficient and scalablereplacements of MOSFETs.
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